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NGK's GaN wafers promise improved internal quantum efficiency - small image shows LED element under light emitting test (Substrate size: 1cm square, Element size: 0.3mm square, Injection current: approx. 200mA, Center wavelength: 450nm)https://zmi.led-professional.com/Plone/media/technology_light-generation_ngk-developed-gan-wafer-for-ultra-high-brightness-leds_NGKs%20GaN%20wafers%20promise%20improved%20internal%20quantum%20efficiency.jpg/viewhttps://zmi.led-professional.com/Plone/media/technology_light-generation_ngk-developed-gan-wafer-for-ultra-high-brightness-leds_NGKs%20GaN%20wafers%20promise%20improved%20internal%20quantum%20efficiency.jpg/@@images/image-1200-92abc68a4bdb5b4f879107e227f20954.jpeg
NGK's GaN wafers promise improved internal quantum efficiency - small image shows LED element under light emitting test (Substrate size: 1cm square, Element size: 0.3mm square, Injection current: approx. 200mA, Center wavelength: 450nm)
