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Demonstration of light emission at 473nm, with full width half maximum of 22nm, from a RPCVD p-GaN layer grown on a MOCVD partial structurehttps://zmi.led-professional.com/Plone/media/technology_light-generation_significant-technical-progress-bluglass-demonstrates-best-ever-rpcvd-p-gan-light-output_Demonstration%20of%20light%20emission%20at%20473nm-%20with%20full%20width%20half%20maximum%20of%2022nm-%20from%20a%20RPCVD%20p-GaN%20layer%20grown%20on%20a%20MOCVD%20partial%20structure.jpg/viewhttps://zmi.led-professional.com/Plone/media/technology_light-generation_significant-technical-progress-bluglass-demonstrates-best-ever-rpcvd-p-gan-light-output_Demonstration%20of%20light%20emission%20at%20473nm-%20with%20full%20width%20half%20maximum%20of%2022nm-%20from%20a%20RPCVD%20p-GaN%20layer%20grown%20on%20a%20MOCVD%20partial%20structure.jpg/@@images/image-1200-c2463b19b6a4b308291a2df1f5995636.jpeg
Demonstration of light emission at 473nm, with full width half maximum of 22nm, from a RPCVD p-GaN layer grown on a MOCVD partial structure