Search results 15596 items matching your search terms. Filter the results Item type Select All/None Event Page GLD Company Collection Folder New items since Yesterday Last week Last month Ever Sort by relevance date (newest first) alphabetically The Figure shows screenshots of some of the enhanced opportunities; Light Source Library Additions, Photometric Data Transfer, Scatter Model Library Additions, and ASAP/CATIA Interoperability. Located in media National's WEBENCH LED Architect simplifies and speeds lighting design. Located in media Compared to its predecessor, TracePro 7.0 has dramatically improved algorithms to speed up the workflow. Located in media 6SigmaET has the modeling capabilities necessary to accurately predict heat transfer and resulting temperature distribution for a variety of design configurations. - In this case, 6SigmaET was able to predict temperatures within 4% of the experimental values, indicating a high level of confidence in the results obtained Located in media USHIO's full-field projection exposure system “UX4-LEDs” for manufacturing LED chips. Located in media Comparison of currently used technologies for LED chip manufacturing with the projection exposure technology used in USHIO's UX-4. Located in media A tower offers storage space for 546 reels and can reduce component storage and management costs Located in media Figure 4: Cross-section TEM data from a NI overgrown at HT with a low V/III ratio. TDs incline to become perpendicular to high-index facets of the NI. Located in media Figure 3: AFM data illustrating the NI density for a) sample A and b) sample B. The overgrowth of sparse NIs can result in formation of new islands (c). Using increased reactor pressure the formation of new islands during HT overgrowth can be suppressed (d). All the scans are 10 μm × 10 μm. Located in media Figure 2: Model results for TD density reduction in redirection reaction layer structure: (a) relative TD density for structures with initial density ρ0 = 1010cm-2 and representative values for the parameter ρ = 0.5 (1), 1 (2), 2 (3); (b) absolute TD density in case ρ = 1 and various initial densities ρ0=1010 (1), 109 (2), 108 (3) cm-2. For all plots the dislocation reaction parameter κ = 100 nm. The total layer thickness includes both redirection and reaction parts. Located in media < Previous 10 items 1 ... 1304 1305 1306 1307 1308 1309 1310 ... 1560 Next 10 items > Subscribe to an always-updated RSS feed.
